型號(hào) 廠商 描述
mt4c4256l
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 Micron Technology, Inc. 256K x 4 DRAM Standard Or Low Power, Extended Refresh(標(biāo)準(zhǔn)或低功率，擴(kuò)展刷新，256K x 4動(dòng)態(tài)RAM)
mt4lc16m4t8tg-5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc16m4t8tg-5s
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc16m4t8tg-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc16m4t8tg-6s
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc4m16f5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc4m16r6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc8m8e1tg-5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc8m8e1tg-5s
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. PLUG, LOW PROFILE 3 POLE
mt4lc8m8p4dj-5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc8m8p4dj-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc8m8p4tg-5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc8m8p4tg-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4ldt464ag
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64無緩沖動(dòng)態(tài)RAM雙列直插存儲(chǔ)器模塊)
mt54v512h18a
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水線式，同步脈沖靜態(tài)存儲(chǔ)器)
mt54v512h18e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水線式，同步脈沖靜態(tài)存儲(chǔ)器)
mt55l1my18p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器)
mt55v1mv18p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器)
mt55l512l18f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
mt55l256l32f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
mt55l256l36f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
mt55l256v32f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
mt55l256v36f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
mt55l64l32f1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 32,3.3V I/O, ZBT SRAM(2Mb,3.3V輸入/輸出，靜態(tài)RAM)
mt55l64l36f1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 36,3.3V I/O, ZBT SRAM(2Mb,3.3V輸入/輸出，靜態(tài)RAM)
mt55l64l36p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 36, 3.3V I/O, ZBT SRAM( 2Mb,3.3V輸入/輸出，靜態(tài)RAM)
mt58l128l18ft-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l128l18ft-6.8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l128l18ft-7.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l128l18ft-8.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l128v18ft-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l128v18ft-6.8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l128v18ft-7.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l128v18ft-8.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l64l32ft-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l64l32ft-6.8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l64l32ft-7.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l64l32ft-8.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l64l36ft-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l64l36ft-6.8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l64l36ft-7.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
mt58l32l32d
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17		 Micron Technology, Inc. 32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器)
mt58l32l36d
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17		 Micron Technology, Inc. 32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器)
mt58l512y32d
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 16Mb SYNCBURST⑩ SRAM
mt58l64l18f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17		 Micron Technology, Inc. 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
mt58l32l32f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17		 Micron Technology, Inc. 32K x 32， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
mt58l32l36f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17		 Micron Technology, Inc. 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM)
mt58l64l18p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17		 Micron Technology, Inc. 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器)
mt58l32l32p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17		 Micron Technology, Inc. 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器)
mt58l32l36p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17		 Micron Technology, Inc. 32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器)