參數(shù)資料
型號: MT4C4256L
廠商: Micron Technology, Inc.
英文描述: 256K x 4 DRAM Standard Or Low Power, Extended Refresh(標準或低功率,擴展刷新,256K x 4動態(tài)RAM)
中文描述: 256K × 4的DRAM標準或低功耗,延長刷新(標準或低功率,擴展刷新,256K × 4動態(tài)內存)
文件頁數(shù): 4/15頁
文件大?。?/td> 240K
代理商: MT4C4256L
MT4C4256(L)
REV. 4/94
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
1994, Micron Semiconductor, Inc.
4
MT4C4256(L)
256K x 4 DRAM
OBSOLETE
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to V
SS
.................... -1V to +7V
Operating Temperature, T
A
(ambient) .......... 0
°
C to +70
°
C
Storage Temperature (plastic)....................-55
°
C to +150
°
C
Power Dissipation ............................................................. 1W
Short Circuit Output Current ..................................... 50mA
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
PARAMETER/CONDITION
STANDBY CURRENT: (TTL)
(
/
R
A
/
S =
/
C
A
/
S = V
IH
)
STANDBY CURRENT: (CMOS)
(
/
R
A
/
S =
/
C
A
/
S = V
CC
-0.2V)
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(
/
R
A
/
S,
/
C
A
/
S, Single Address Cycling:
t
RC =
t
RC [MIN])
OPERATING CURRENT: FAST PAGE MODE
Average power supply current
(
/
R
A
/
S = V
IL
,
/
C
A
/
S, Address Cycling:
t
PC =
t
PC [MIN])
REFRESH CURRENT:
/
R
A
/
S ONLY
Average power supply current
(
/
R
A
/
S Cycling,
/
C
A
/
S = V
IH
:
t
RC =
t
RC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(
/
R
A
/
S,
/
C
A
/
S, Address Cycling:
t
RC =
t
RC [MIN])
REFRESH CURRENT: Extended
Average power supply current during Extended Refresh:
/
C
A
/
S = 0.2V or CBR cycling;
/
R
A
/
S =
t
RAS (MIN) to1
μ
s;
/
W
/
E, A0-A8 and D
IN
= Vcc -0.2V or 0.2V (D
IN
may be
left open);
t
RC = 125
μ
s (512 rows at 125
μ
s = 64ms)
VERSION
SYMBOL
I
CC
1
-6
2
-7
2
-8
2
UNITS
mA
NOTES
MT4C4256
MT4C4256 L
I
CC
2
I
CC
2
1
1
1
mA
μ
A
200
200
200
I
CC
3
90
80
70
mA
3, 4,
29
I
CC
4
70
60
50
mA
3, 4,
29
I
CC
5
90
80
70
mA
3, 29
I
CC
6
90
80
70
mA
3, 5
MT4C4256 L
I
CC
7
200
200
200
μ
A
3, 5,
27
MAX
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(Notes: 1, 6, 7) (V
CC
= +5V
±
10%)
PARAMETER/CONDITION
Supply Voltage
Input High (Logic 1) Voltage, all inputs
Input Low (Logic 0) Voltage, all inputs
INPUT LEAKAGE CURRENT
Any input 0V
V
IN
6.5V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: (Q is disabled; 0V
V
OUT
5.5V)
OUTPUT LEVELS
Output High Voltage (I
OUT
= -5mA)
Output Low Voltage (I
OUT
= 4.2mA)
SYMBOL
V
CC
V
IH
V
IL
MIN
4.5
2.4
-1.0
MAX
5.5
V
CC
+1
0.8
UNITS
V
V
V
NOTES
I
I
-2
2
μ
A
I
OZ
V
OH
-10
2.4
10
μ
A
V
V
OL
0.4
V
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