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參數(shù)資料
| 型號(hào)： | MT54V512H18A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水線式，同步脈沖靜態(tài)存儲(chǔ)器) |
| 中文描述： | 為512k × 18同步流水線突發(fā)靜態(tài)存儲(chǔ)器（9Mb以上，流水線式，同步脈沖靜態(tài)存儲(chǔ)器） |
| 文件頁數(shù)： | 14/22頁 |
| 文件大?。?/td> | 258K |
| 代理商： | MT54V512H18A |
14
512K x 18 2.5V V
DD
, HSTL, QDRb2 SRAM
MT54V512H18A.p65 – Rev. 3/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
512K x 18
2.5V V
DD
, HSTL, QDRb2 SRAM
READ/WRITE TIMING
NOTE:
1. Q00 refers to output from address A0+0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1.
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. In this example, if address A0 = A1, data Q00 = D10, Q01 = D11. Write data is forwarded immediately as read results.
READ
1
READ
3
WRITE
4
WRITE
6
WRITE
2
NOP
7
READ
5
WRITE
8
NOP
9
K
10
K#
R#
W#
A
Q
D
C
C#
A1
A0
D10
tKHKL
tKHK#H
tKHCH
tCHQV
tKLKH
tKHKH
t
tKHIX
tAVKHtKHAX
tDVKH
tKHDX
t
KHCH
DON’T CARE
UNDEFINED
tCHQX1
tCHQZ
IVKH
tKHKL
tKLKH
A2
A3
A4
A5
A6
tAVKHtKHAX
D11
D30
D31
D50
D51
D60
D61
tDVKH
tKHDX
Q00
Q21
Q01
Q20
Q40
Q41
tCHQV
tCHQX
tCHQX
tKHK#H
tKHKH
READ/WRITE TIMING PARAMETERS
-6
-7.5
-10
SYMBOL
t
KHKH
t
KHKL
t
KLKH
t
KHK#H
t
KHCH
t
CHQV
t
CHQX
t
CHQZ
MIN
6.0
2.4
2.4
2.7
0.0
MAX
MIN
7.5
3.0
3.0
3.4
0.0
MAX
MIN
10
3.5
3.5
4.6
0.0
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
3.3
2.0
2.5
4.1
2.5
3.0
5.4
3.0
3.0
1.2
1.2
1.2
2.5
3.0
3.0
-6
-7.5
-10
SYMBOL
t
CHQX1
t
AVKH
t
IVKH
t
DVKH
t
KHAX
t
KHIX
t
KHDX
MIN
1.2
0.7
0.7
0.7
0.7
0.7
0.7
MAX
MIN
1.2
0.8
0.8
0.8
0.8
0.8
0.8
MAX
MIN
1.2
1.0
1.0
1.0
1.0
1.0
1.0
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
相關(guān)PDF資料 |
PDF描述 |
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| MT54V512H18E | 512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水線式，同步脈沖靜態(tài)存儲(chǔ)器) |
| MT55L1MY18P | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器) |
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| MT55L512L18F | 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器) |
| MT55L256L32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT54V512H18AF-10 | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 2.5V 9M-Bit 512K x 18 3ns 165-Pin FBGA |
| MT54V512H18AF-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Trays |
| MT54V512H18E1F-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT54V512H18EF-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT54V512H18EF-6 | 制造商:Cypress Semiconductor 功能描述:DS2KX18 SRAM PLASTIC FBGA 2.5V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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