參數(shù)資料
型號(hào): MT55L64L36P1
廠商: Micron Technology, Inc.
英文描述: 64K x 36, 3.3V I/O, ZBT SRAM( 2Mb,3.3V輸入/輸出,靜態(tài)RAM)
中文描述: 64K的× 36,3.3V的I / O的ZBT SRAM的(處理器,3.3V的輸入/輸出,靜態(tài)內(nèi)存)
文件頁數(shù): 17/23頁
文件大?。?/td> 404K
代理商: MT55L64L36P1
17
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Pipelined ZBT SRAM
MT55L128L18P1_2.p65
Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
3.3V I/O, PIPELINED ZBT SRAM
AC TEST CONDITIONS
Input pulse levels ...................................V
SS
to 3.0V
Input rise and fall times.................................. 1.0ns
Input timing reference levels .......................... 1.5V
Output reference levels ................................... 1.5V
Output load ............................. See Figures 1 and 2
Q
50
V = 1.5V
Z = 50
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
LOAD DERATING CURVES
The Micron 128K x 18, 64K x 32, and 64K x 36 ZBT
SRAM timing is dependent upon the capacitive loading
on the outputs.
Consult the factory for copies of I/O current versus
voltage curves.
Output Load Equivalents
相關(guān)PDF資料
PDF描述
MT58L128L18FT-10 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128L18FT-6.8 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128L18FT-7.5 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128L18FT-8.5 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128V18FT-10 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
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