參數(shù)資料
型號: MT55L256V36F
廠商: Micron Technology, Inc.
英文描述: 8Mb: 256K x 36,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
中文描述: 8MB的:256K × 36,流量通過ZBT SRAM的(8兆流通式同步靜態(tài)存儲器)
文件頁數(shù): 13/25頁
文件大?。?/td> 380K
代理商: MT55L256V36F
13
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
STATE DIAGRAM FOR ZBT SRAM
DESELECT
BEGIN
READ
BURST
READ
BEGIN
WRITE
DS
DS
DS
BURST
WRITE
READ
DS
WRITE
WRITE
BURST
READ
WRITE
READ
BURST
BURST
READ
BURST
DS
WRTE
KEY:
COMMAND
DS
READ
WRITE
BURST
OPERATION
DESELECT
New READ
New WRITE
BURST READ,
BURST WRITE or
CONTINUE DESELECT
BURST
READ
WRITE
NOTE:
1. A STALL or IGNORE CLOCK EDGE cycle is not shown in the above diagram. This is because CKE# HIGH only blocks the
clock (CLK) input and does not change the state of the device.
2. States change on the rising edge of the clock (CLK).
相關(guān)PDF資料
PDF描述
MT55L64L32F1 64K x 32,3.3V I/O, ZBT SRAM(2Mb,3.3V輸入/輸出,靜態(tài)RAM)
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