參數(shù)資料
型號: MT55L64L36F1
廠商: Micron Technology, Inc.
英文描述: 64K x 36,3.3V I/O, ZBT SRAM(2Mb,3.3V輸入/輸出,靜態(tài)RAM)
中文描述: 64K的x 36,3.3六/ O的ZBT SRAM的(處理器,3.3V的輸入/輸出,靜態(tài)內存)
文件頁數(shù): 17/23頁
文件大?。?/td> 406K
代理商: MT55L64L36F1
17
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_2.p65
Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
3.3V I/O, FLOW-THROUGH ZBT SRAM
AC TEST CONDITIONS
Input pulse levels ...................................V
SS
to 3.0V
Input rise and fall times.................................. 1.0ns
Input timing reference levels .......................... 1.5V
Output reference levels ................................... 1.5V
Output load ............................. See Figures 1 and 2
Q
50
V = 1.5V
Z = 50
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
LOAD DERATING CURVES
The Micron 128K x 18, 64K x 32 and 64K x 36 ZBT
SRAM timing is dependent upon the capacitive loading
on the outputs.
Consult the factory for copies of I/O current versus
voltage curves.
Output Load Equivalents
相關PDF資料
PDF描述
MT55L64L36P1 64K x 36, 3.3V I/O, ZBT SRAM( 2Mb,3.3V輸入/輸出,靜態(tài)RAM)
MT58L128L18FT-10 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128L18FT-6.8 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128L18FT-7.5 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128L18FT-8.5 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
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