參數(shù)資料
型號(hào): MT4LDT464AG
廠商: Micron Technology, Inc.
英文描述: 4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64無緩沖動(dòng)態(tài)RAM雙列直插存儲(chǔ)器模塊)
中文描述: 4梅格× 64 Nonbuffered內(nèi)存插槽(4個(gè)M × 64無緩沖動(dòng)態(tài)RAM的雙列直插存儲(chǔ)器模塊)
文件頁數(shù): 11/31頁
文件大?。?/td> 439K
代理商: MT4LDT464AG
1, 2, 4 Meg x 64 Nonbuffered DRAM DIMMs
DM67.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
11
1, 2, 4 MEG x 64
NONBUFFERED DRAM DIMMs
OBSOLETE
FAST PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 12, 29) (V
DD
= +3.3V
±
0.3V)
AC CHARACTERISTICS - FAST PAGE MODE OPTION
PARAMETER
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (1,024 cycles)
Refresh period (2,048 cycles)
RAS# precharge time
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-6
SYMBOL
t
RC
t
RCD
t
RCH
t
RCS
t
REF
t
REF
t
RP
t
RPC
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WP
t
WRH
t
WRP
MIN
110
20
0
0
MAX
UNITS
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
16
18
16
32
40
0
0
15
155
85
15
2
10
45
0
10
10
10
18
23
50
23
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