參數(shù)資料
型號: MT58L32L36D
廠商: Micron Technology, Inc.
英文描述: 32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
中文描述: 32KX8的36,3.3六/ O的流水線,雙氰胺SyncBurst的SRAM(1兆,3.3V的輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
文件頁數(shù): 7/17頁
文件大小: 326K
代理商: MT58L32L36D
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L64L18D.p65 – Rev. 9/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
7
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL)
X...X01
X...X00
X...X11
X...X10
FOURTH ADDRESS (INTERNAL)
X...X11
X...X10
X...X01
X...X00
X...X10
X...X11
X...X00
X...X01
LINEAR BURST ADDRESS TABLE (MODE = LOW)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL)
X...X01
X...X10
X...X11
X...X00
FOURTH ADDRESS (INTERNAL)
X...X11
X...X00
X...X01
X...X10
X...X10
X...X11
X...X00
X...X01
FUNCTION
READ
READ
WRITE Byte “a”
WRITE Byte “b”
WRITE All Bytes
WRITE All Bytes
GW#
H
H
H
H
H
L
BWE#
H
L
L
L
L
X
BWa#
X
H
L
H
L
X
BWb#
X
H
H
L
L
X
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x18)
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x32/x36)
FUNCTION
READ
READ
WRITE Byte “a”
WRITE All Bytes
WRITE All Bytes
GW#
H
H
H
H
L
BWE#
H
L
L
L
X
BWa#
X
H
L
L
X
BWb#
X
H
H
L
X
BWc#
X
H
H
L
X
BWd#
X
H
H
L
X
NOTE:
Using BWE# and BWa# through BWd#, any one or more bytes may be written.
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MT58L512Y32D 16Mb SYNCBURST⑩ SRAM
MT58L64L18F 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
MT58L32L32F 32K x 32, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
MT58L32L36F 32K x 36, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
MT58L64L18P 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
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