參數(shù)資料
型號(hào): MT54V512H18E
廠商: Micron Technology, Inc.
英文描述: 512K x 18 Synchronous Pipelined Burst SRAM(9Mb,流水線式,同步脈沖靜態(tài)存儲(chǔ)器)
中文描述: 為512k × 18同步流水線突發(fā)靜態(tài)存儲(chǔ)器(9Mb以上,流水線式,同步脈沖靜態(tài)存儲(chǔ)器)
文件頁(yè)數(shù): 14/22頁(yè)
文件大?。?/td> 260K
代理商: MT54V512H18E
14
512K x 18 2.5V V
DD
, HSTL, QDRb4 SRAM
MT54V512H18E.p65 – Rev. 3/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
512K x 18
2.5V V
DD
, HSTL, QDRb4 SRAM
READ/WRITE TIMING
NOTE:
1. Q00 refers to output from address A0+0. Q01 refers to output from the next internal burst address following A0,
i.e., A0+ 1, etc.
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. In this example, if address A2 =A1, data Q20 = D10, Q21 = D11. Write data is forwarded immediately as read results.
K
1
2
3
4
5
6
7
K#
R#
W#
A
Q
D
C
C#
A0
READ
READ
WRITE
WRITE
Q00
Q03
D10
D11
D12
D13
D30
D31
D32
D33
A1
t
KHKL
t
KHK#H
t
KHCH
t
CHQV
t
CHQX
t
KLKH
t
KHKH
t
t
KHIX
t
AVKH
t
KHAX
t
DVKH
t
KHDX
tKHCH
Q01
Q02
Q23
Q22
Q20
Q21
NOP
NOP
Qx3
A2
t
DVKH
t
KHDX
DON’T CARE
UNDEFINED
t
CHQX1
tCHQV
t
CHQX
tCHQZ
IVKH
t
t
KHIX
IVKH
tKHKL
tKHK#H
tKLKH
tKHKH
A3
READ/WRITE TIMING PARAMETERS
-6
-7.5
-10
SYMBOL
t
KHKH
t
KHKL
t
KLKH
t
KHK#H
t
KHCH
t
CHQV
t
CHQX
t
CHQZ
MIN
6.0
2.4
2.4
2.7
0.0
MAX
MIN
7.5
3.0
3.0
3.4
0.0
MAX
MIN
10
3.5
3.5
4.6
0.0
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
3.3
2.0
2.5
4.1
2.5
3.0
5.4
3.0
3.0
1.2
1.2
1.2
2.5
3.0
3.0
-6
-7.5
-10
SYMBOL
t
CHQX1
t
AVKH
t
IVKH
t
DVKH
t
KHAX
t
KHIX
t
KHDX
MIN
1.2
0.7
0.7
0.7
0.7
0.7
0.7
MAX
MIN
1.2
0.8
0.8
0.8
0.8
0.8
0.8
MAX
MIN
1.2
1.0
1.0
1.0
1.0
1.0
1.0
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
相關(guān)PDF資料
PDF描述
MT55L1MY18P 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55V1MV18P 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L512L18F 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L256L32F 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L256L36F 8Mb: 256K x 36,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT54V512H18E1F-5 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT54V512H18EF-10 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT54V512H18EF-6 制造商:Cypress Semiconductor 功能描述:DS2KX18 SRAM PLASTIC FBGA 2.5V 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT54V512H18EF-6C 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT54V512H36EF-5 制造商:Rochester Electronics LLC 功能描述:- Bulk