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參數(shù)資料
| 型號： | MT55V1MV18P |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器) |
| 中文描述： | 16Mb的：1梅格× 18，流量通過ZBT SRAM的（16Mb的流通式同步靜態(tài)存儲器） |
| 文件頁數(shù)： | 7/34頁 |
| 文件大?。?/td> | 460K |
| 代理商： | MT55V1MV18P |
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7
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1M18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
TQFP PIN DESCRIPTIONS (continued)
x18
88
x32/36
88
SYMBOL
R/W#
TYPE
Input
DESCRIPTION
Read/Write: This input determines the cycle type when ADV/
LD# is LOW and is the only means for determining READs and
WRITEs. READ cycles may not be converted into WRITEs (and
vice versa) other than by loading a new address. A LOW on this
pin permits BYTE WRITE operations and must meet the setup
and hold times around the rising edge of CLK. Full bus-width
WRITEs occur if all byte write enables are LOW.
Mode: This input selects the burst sequence. A LOW on this
pin selects linear burst. NC or HIGH on this pin selects
interleaved burst. Do not alter input state while device is
operating. LBO# is the JEDEC-standard term for MODE.
SRAM Data I/Os: Byte “a” associated with is DQa pins; Byte “b”
is associated with DQb pins; Byte “c” is associated with DQc
pins; Byte “d” is associated with DQd pins. Input data must
meet setup and hold times around the rising edge of CLK.
31
31
MODE
(LBO#)
Input
(a)
58, 59, 62, 63,
68, 69, 72-74
(b)
8, 9, 12, 13,
18, 19, 22-24
(a)
52, 53, 56-59,
62, 63
(b)
68, 69, 72-75,
78, 79
(c)
2, 3, 6-9,
12, 13
(d)
18, 19, 22-25,
28, 29
51
80
1
30
14, 15, 16, 41, 65,
66, 91
4, 11, 20, 27,
54, 61, 70, 77
5, 10, 17, 21,
26, 40, 55, 60,
67, 71, 76, 90
n/a
DQa
Input/
Output
DQb
DQc
DQd
–
–
NC/
DQPa
NC/
DQPb
NC/
DQPc
NC/
DQPd
V
DD
NC/
I/O
No Connect/Data Bits: On the x32 version, these pins are
no connect (NC) and can be left floating or connected to
GND to minimize thermal impedance. On the x36 version,
these bits are DQs.
Power Supply:
See DC Electrical Characteristics and
Operating Conditions for range.
Isolated Output Buffer Supply:
See DC Electrical
Characteristics and Operating Conditions for range.
Ground:
GND.
14, 15, 16, 41, 65,
66, 91
4, 11, 20, 27,
54, 61, 70, 77
5, 10, 17, 21,
26, 40, 55, 60,
67, 71, 76, 90
1-3, 6, 7, 25,
28-30, 51-53, 56,
57, 75, 78, 79,
95, 96
38, 39, 42, 43
Supply
V
DD
Q
Supply
V
SS
Supply
NC
–
No Connect: These pins can be left floating or connected to
GND to minimize thermal impedance.
38, 39, 42, 43
DNU
–
Do Not Use: These signals may either be unconnected or wired
to GND to minimize thermal impedance.
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| MT55L512L18F | 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256L32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256L36F | 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256V32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55V1MV18PT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55V512V32FT-8.8 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55V512V32PF-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55V512V32PF-6 | 制造商:Rochester Electronics LLC 功能描述: |
| MT55V512V32PT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
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