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參數(shù)資料
| 型號(hào)： | MT55V1MV18P |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器) |
| 中文描述： | 16Mb的：1梅格× 18，流量通過(guò)ZBT SRAM的（16Mb的流通式同步靜態(tài)存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 17/34頁(yè) |
| 文件大?。?/td> | 460K |
| 代理商： | MT55V1MV18P |
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17
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1M18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
TQFP THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
CONDITIONS
SYMBOL
q
JA
TYP
46
UNITS
oC/W
NOTES
1
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
Thermal Resistance
(Junction to Top of Case)
q
JC
2.8
oC/W
1
NOTE:
1. This parameter is sampled.
TQFP CAPACITANCE
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
CONDITIONS
T
A
= 25oC; f = 1 MHz
V
DD
= 3.3V
SYMBOL
C
I
C
O
C
A
C
CK
TYP
3
4
3
3
MAX
4
5
3.5
3.5
UNITS
pF
pF
pF
pF
NOTES
1
1
1
1
FBGA CAPACITANCE
DESCRIPTION
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
CONDITIONS
SYMBOL
C
I
C
O
C
CK
TYP
2.5
4
2.5
MAX
3.5
5
3.5
UNITS
pF
pF
pF
NOTES
1
1
1
T
A
= 25oC; f = 1 MHz
FBGA THERMAL RESISTANCE
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
CONDITIONS
SYMBOL
q
JA
TYP
40
UNITS NOTES
oC/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1
Junction to Case (Top)
Junction to Pins
(Bottom)
q
JC
q
JB
9
17
oC/W
oC/W
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT55L512L18F | 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器) |
| MT55L256L32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器) |
| MT55L256L36F | 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器) |
| MT55L256V32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器) |
| MT55L256V36F | 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55V1MV18PT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55V512V32FT-8.8 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55V512V32PF-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55V512V32PF-6 | 制造商:Rochester Electronics LLC 功能描述: |
| MT55V512V32PT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
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