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參數(shù)資料
| 型號： | MT4LC8M8P4TG-6 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DRAM |
| 中文描述： | 內(nèi)存 |
| 文件頁數(shù)： | 4/20頁 |
| 文件大小： | 382K |
| 代理商： | MT4LC8M8P4TG-6 |
4
8 Meg x 8 FPM DRAM
D19_2.p65
–
Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8 MEG x 8
FPM DRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
CC
Relative to V
SS
................ -1V to +4.6V
Voltage on NC, Inputs or I/O Pins
Relative to V
SS
....................................... -1V to +4.6V
Operating Temperature, T
A
(ambient) ... 0°C to +70°C
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ................................................... 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6) (V
CC
= +3.3V ±0.3V)
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE:
Valid Logic 1; All inputs, I/Os and any NC
INPUT LOW VOLTAGE:
Valid Logic 0; All inputs, I/Os and any NC
INPUT LEAKAGE CURRENT:
Any input at V
IN
(0V
￡
V
IN
￡
V
CC
+ 0.3V);
All other pins not under test = 0V
OUTPUT HIGH VOLTAGE:
I
OUT
= -2mA
OUTPUT LOW VOLTAGE:
I
OUT
= 2mA
OUTPUT LEAKAGE CURRENT:
Any output at V
OUT
(0V
￡
V
OUT
￡
V
CC
+ 0.3V);
DQ is disabled and in High-Z state
SYMBOL
V
CC
MIN
3
MAX
3.6
UNITS NOTES
V
V
IH
2
V
CC
+ 0.3
V
26
V
IL
-0.3
0.8
V
26
I
I
-2
2
μA
V
OH
2.4
–
V
V
OL
–
0.4
V
I
OZ
-5
5
μA
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