參數(shù)資料
型號: MT58L32L32F
廠商: Micron Technology, Inc.
英文描述: 32K x 32, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
中文描述: 32K的× 32,3.3V的I / O的流量通過SyncBurst的SRAM(1兆,3.3V的輸入/輸出,流通式同步脈沖靜態(tài)內(nèi)存)
文件頁數(shù): 2/17頁
文件大?。?/td> 327K
代理商: MT58L32L32F
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F.p65 – Rev. 9/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
2
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
FUNCTIONAL BLOCK DIAGRAM
64K x 18
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER AND
LOGIC
CLR
Q1
Q0
ADSC#
16
16
14
16
CE#
CE2
CE2#
18
18
2
OE#
SENSE
MEMORY
ARRAY
ADSP#
9
9
OUTPUT
BUFFERS
INPUT
REGISTERS
9
9
18
18
2
MODE
GW#
BWE#
SA0, SA1, SA
BWb#
BWa#
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
ENABLE
REGISTER
SA0'
SA1'
SA0-SA1
DQs
DQPa
DQPb
BYTE “b”
WRITE DRIVER
BYTE “a”
WRITE DRIVER
NOTE:
Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions and timing diagrams
for detailed information.
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER
AND LOGIC
CLR
Q1
Q0
ADSP#
ADSC#
15
15
13
15
CE#
CE2
CE2#
OE#
ENABLE
REGISTER
4
SENSE
AMPS
OUTPUT
BUFFERS
INPUT
REGISTERS
32K x 8 x 4
(x32)
32K x 9 x 4
(x36)
MEMORY
ARRAY
MODE
BWE#
GW#
BWd#
BWc#
BYTE “d”
WRITE REGISTER
BYTE “c”
WRITE REGISTER
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
DQs
BYTE “a”
WRITE DRIVER
BYTE “b”
WRITE DRIVER
BYTE “c”
WRITE DRIVER
BYTE “d”
WRITE DRIVER
SA0, SA1, SA
BWb#
BWa#
SA0'
SA1'
SA0-SA1
FUNCTIONAL BLOCK DIAGRAM
32K x 32/36
相關(guān)PDF資料
PDF描述
MT58L32L36F 32K x 36, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
MT58L64L18P 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT58L32L32P 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT58L32L36P 32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT6V16M16 512K x 16 x 32 banks RDRAM(512K x 16 x 32組 同步動態(tài)RAM)
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