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參數(shù)資料
| 型號(hào)： | MT58L512Y32D |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb SYNCBURST⑩ SRAM |
| 中文描述： | ⑩的SRAM 16Mb的SYNCBURST |
| 文件頁(yè)數(shù)： | 15/34頁(yè) |
| 文件大?。?/td> | 526K |
| 代理商： | MT58L512Y32D |
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15
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
TQFP THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
CONDITIONS
SYMBOL
θ
JA
TYP
46
UNITS NOTES
oC/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1
Thermal Resistance
(Junction to Top of Case)
θ
JC
2.8
oC/W
1
NOTE:
1. This parameter is sampled.
TQFP CAPACITANCE
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
CONDITIONS
T
A
= 25oC; f = 1 MHz;
V
DD
= 3.3V
SYMBOL
C
I
C
O
C
A
C
CK
TYP
3
4
3
3
MAX
4
5
3.5
3.5
UNITS
pF
pF
pF
pF
NOTES
1
1
1
1
FBGA THERMAL RESISTANCE
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
CONDITIONS
SYMBOL
q
JA
TYP
40
UNITS NOTES
oC/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1
Junction to Case (Top)
Junction to Pins
(Bottom)
q
JC
q
JB
9
17
oC/W
oC/W
1
1
FBGA CAPACITANCE
DESCRIPTION
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
CONDITIONS
SYMBOL
C
I
C
O
C
CK
TYP
2.5
4
2.5
MAX
3.5
5
3.5
UNITS
pF
pF
pF
NOTES
1
1
1
T
A
= 25oC; f = 1 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L64L18F | 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L32F | 32K x 32， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L36F | 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM) |
| MT58L64L18P | 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器) |
| MT58L32L32P | 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L512Y32DT-10 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32DT-10 ES | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L512Y32DT-6 | 制造商:Cypress Semiconductor 功能描述:DS2KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32PT-10 IT | 制造商:Cypress Semiconductor 功能描述:16MB 512KX32 SRAM PLASTIC IND |
| MT58L512Y32PT-6 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
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