- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385640 > MT55L512L18F (Micron Technology, Inc.) 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) PDF資料下載
參數(shù)資料
| 型號： | MT55L512L18F |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| 中文描述： | 8MB的：為512k × 18，流量通過ZBT SRAM的（8兆流通式同步靜態(tài)存儲器） |
| 文件頁數(shù)： | 15/25頁 |
| 文件大?。?/td> | 380K |
| 代理商： | MT55L512L18F |
15
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
.................................. -0.5V to +4.6V
Voltage on V
DD
Q Supply
Relative to V
SS
..................................... -0.5V to V
DD
V
IN
...............................................-0.5V to V
DD
Q + 0.5V
Storage Temperature (TQFP) ............-55°C to +150°C
Storage Temperature (FBGA) ...........-55°C to +125°C
Junction Temperature**...................................+150°C
Short Circuit Output Current .......................... 100mA
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature, and airflow.
See Micron Technical Note TN-05-14 for more
information.
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C
￡
T
A
￡
+70°C; V
DD
, V
DD
Q = +3.3V ±0.165V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
SYMBOL
V
IH
V
IH
V
IL
IL
I
IL
O
MIN
2.0
2.0
-0.3
-1.0
-1.0
MAX
V
DD
+ 0.3
V
DD
+ 0.3
0.8
1.0
1.0
UNITS
V
V
V
μA
μA
NOTES
1, 2
1, 2
1, 2
3
DQ pins
0V
￡
V
IN
￡
V
DD
Output(s) disabled,
0V
￡
V
IN
￡
V
DD
I
OH
= -4.0mA
I
OL
= 8.0mA
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
V
OH
V
OL
V
DD
V
DD
Q
2.4
V
V
V
V
1, 4
1, 4
1
1, 5
0.4
3.465
V
DD
3.135
3.135
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
V
IH
￡
+4.6V for t
￡
t
KHKH/2 for I
￡
20mA
Undershoot:
V
IL
3
-0.7V for t
￡
t
KHKH/2 for I
￡
20mA
Power-up:
V
IH
￡
+3.465V and V
DD
￡
+3.135V for t
￡
200ms
3. MODE pin has an internal pull-up, and input leakage = ±10μA.
4. The load used for V
OH
, V
OL
testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O
curves are available upon request.
5. V
DD
Q should never exceed V
DD
. V
DD
and V
DD
Q can be externally wired together to the same power supply.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT55L256L32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256L36F | 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256V32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256V36F | 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L64L32F1 | 64K x 32,3.3V I/O, ZBT SRAM(2Mb,3.3V輸入/輸出，靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55L512L18FF-11 | 制造商:Micron Technology Inc 功能描述: |
| MT55L512L18FT-12 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55L512L18P | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb ZBT SRAM |
| MT55L512L18P-1 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb ZBT SRAM |
| MT55L512L18PF-7.5 | 制造商:Cypress Semiconductor 功能描述:8MB 512KX18 SRAM PLASTIC FBGA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。