- 您現(xiàn)在的位置：買賣IC網 > PDF目錄385640 > MT4LC8M8P4DJ-5 (Micron Technology, Inc.) DRAM PDF資料下載
參數(shù)資料
| 型號： | MT4LC8M8P4DJ-5 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DRAM |
| 中文描述： | 內存 |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 382K |
| 代理商： | MT4LC8M8P4DJ-5 |
5
8 Meg x 8 FPM DRAM
D19_2.p65
–
Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8 MEG x 8
FPM DRAM
I
CC
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 2, 3, 5, 6) (V
CC
= +3.3V ±0.3V)
4K
8K
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
IH
)
STANDBY CURRENT: CMOS
(RAS# = CAS#
V
CC
- 0.2V; DQs may be left open;
Other inputs: V
IN
V
CC
- 0.2V or V
IN
￡
0.2V)
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
OPERATING CURRENT: FAST PAGE MODE
Average power supply current (RAS# = V
IL
,
CAS#, address cycling:
t
PC =
t
PC [MIN])
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
IH
:
t
RC =
t
RC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
REFRESH CURRENT: Extended (
“
S
”
version only)
Average power supply current: CAS# = 0.2V or
CBR cycling; RAS# =
t
RAS (MIN); WE# = V
CC
- 0.2V;
A0-A11, OE# and D
IN
= V
CC
- 0.2V or 0.2V
(D
IN
may be left open)
REFRESH CURRENT: Self (
“
S
”
version only)
Average power supply current: CBR with
RAS#
t
RASS (MIN) and CAS# held LOW;
WE# = V
CC
- 0.2V; A0-A11, OE# and D
IN
=
V
CC
- 0.2V or 0.2V (D
IN
may be left open)
SYMBOL
I
CC
1
SPEED
ALL
REFRESH
1
REFRESH
1
UNITS NOTES
mA
I
CC
2
ALL
500
500
μA
I
CC
3
-5
-6
175
165
135
125
mA
25
I
CC
4
-5
-6
105
95
105
95
mA
25
I
CC
5
-5
-6
175
165
135
125
mA
22
I
CC
6
-5
-6
175
165
175
165
mA
4, 7
I
CC
7
ALL
400
400
μA
4, 7
I
CC
8
ALL
400
400
μA
4, 7
相關PDF資料 |
PDF描述 |
|---|---|
| MT4LC8M8P4DJ-6 | DRAM |
| MT4LC8M8P4TG-5 | DRAM |
| MT4LC8M8P4TG-6 | DRAM |
| MT4LDT464AG | 4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64無緩沖動態(tài)RAM雙列直插存儲器模塊) |
| MT54V512H18A | 512K x 18 Synchronous Pipelined Burst SRAM(9Mb，流水線式，同步脈沖靜態(tài)存儲器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT4LC8M8P4DJ-6 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
| MT4LC8M8P4TG-5 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
| MT4LC8M8P4TG-6 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
| MT4LCM16E5DJ-6 | 制造商:. 功能描述: |
| MT4LD164AG-52B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 Burst EDO Page Mode DRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復。