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參數(shù)資料
| 型號： | MT58L32L36F |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM) |
| 中文描述： | 32K的× 36，3.3V的I / O的流量通過SyncBurst的SRAM（1兆，3.3V的輸入/輸出，流通式同步脈沖靜態(tài)內存） |
| 文件頁數(shù)： | 14/17頁 |
| 文件大小： | 327K |
| 代理商： | MT58L32L36F |
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F.p65 – Rev. 9/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
14
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
READ TIMING
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
BWa#-BWd#
Q
High-Z
tKQLZ
tKQX
tKQ
ADV#
tOEHZ
tKQ
Single READ
BURST
READ
tOEQ
tOELZ
tKQHZ
Burst wraps around
to its initial state.
tAAH
tAAS
tWH
tWS
tADSH
tADSS
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A1)
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
A2
(NOTE 1)
BWE#, GW#,
ADV# suspends burst.
DONT CARE
UNDEFINED
Deselect Cycle
(Note 4)
NOTE:
1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. Timing is shown assuming that the device was not enabled before entering into this sequence.
4. Outputs are disabled
t
KQHZ after deselect.
t
AS
t
ADSS
t
AAS
t
WS
t
CES
t
AH
t
ADSH
t
AAH
t
WH
t
CEH
2.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0.5
2.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0.5
2.5
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
READ TIMING PARAMETERS
-7.5
-8.5
-10
SYM
t
KC
f
KF
t
KH
t
KL
t
KQ
t
KQX
t
KQLZ
t
KQHZ
t
OEQ
t
OELZ
t
OEHZ
MIN
8.8
MAX
MIN
10.0
MAX
MIN
15
MAX
UNITS
ns
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
113
100
66
1.9
1.9
1.9
1.9
4.0
4.0
7.5
8.5
10.0
1.5
1.5
3.0
4.0
3.0
4.0
4.2
4.2
5.0
5.0
5.0
5.0
0
0
0
4.2
5.0
5.0
-7.5
-8.5
-10
SYM
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
相關PDF資料 |
PDF描述 |
|---|---|
| MT58L64L18P | 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L32L32P | 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L32L36P | 32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT6V16M16 | 512K x 16 x 32 banks RDRAM(512K x 16 x 32組 同步動態(tài)RAM) |
| MT6V16M18 | 512K x 18 x 32 banks RDRAM(512K x 18 x 32組 同步動態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L32L36F-10 | 制造商:Micron Technology Inc 功能描述: |
| MT58L32L36FT-10 | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Quad 3.3V 1M-Bit 32K x 36 10ns 100-Pin TQFP 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L32L36PT-10 TR | 制造商:Cypress Semiconductor 功能描述:32KX36 SRAM PLASTIC TQFP 3.3V |
| MT58L512L18D | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM |
| MT58L512L18DT-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
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