參數(shù)資料
型號: MT55L256V32F
廠商: Micron Technology, Inc.
英文描述: 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
中文描述: 8MB的:256K × 32,流量通過ZBT SRAM的(8兆流通式同步靜態(tài)存儲器)
文件頁數(shù): 16/25頁
文件大?。?/td> 380K
代理商: MT55L256V32F
16
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C
T
A
+70°C; V
DD
= +3.3V ±0.165V; V
DD
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
Data bus (DQx)
Inputs
SYMBOL
V
IH
Q
V
IH
V
IL
IL
I
IL
O
MIN
1.7
1.7
-0.3
-1.0
-1.0
MAX
UNITS
V
V
V
μA
μA
NOTES
1, 2
1, 2
1, 2
3
V
DD
Q + 0.3
V
DD
+ 0.3
0.7
1.0
1.0
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
0V
V
IN
V
DD
Output(s) disabled,
0V
V
IN
V
DD
Q (DQx)
I
OH
= -2.0mA
I
OH
= -1.0mA
I
OL
= 2.0mA
I
OL
= 1.0mA
Output High Voltage
V
OH
V
OH
V
OL
V
OL
V
DD
V
DD
Q
1.7
2.0
3.135
2.375
V
V
V
V
V
V
1
1
1
1
1
1
Output Low Voltage
0.7
0.4
3.465
2.9
Supply Voltage
Isolated Output Buffer Supply
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
V
IH
+4.6V for t
t
KHKH/2 for I
20mA
Undershoot:
V
IL
3
-0.7V for t
t
KHKH/2 for I
20mA
Power-up:
V
IH
+3.465V and V
DD
+3.135V for t
200ms
3. MODE pin has an internal pull-up, and input leakage = ±10μA.
4. This parameter is sampled.
5. Preliminary package data
TQFP CAPACITANCE
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
CONDITIONS
T
A
= +25°C; f = 1 MHz
V
DD
= 3.3V
SYMBOL
C
I
C
O
C
A
C
CK
TYP
3
4
3
3
MAX
4
5
3.5
3.5
UNITS
pF
pF
pF
pF
NOTES
4
4
4
4
FBGA CAPACITANCE
DESCRIPTION
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
CONDITIONS
SYMBOL
C
I
C
O
C
CK
TYP
2.5
4
2.5
MAX
3.5
5
3.5
UNITS
pF
pF
pF
NOTES
4
4
4
T
A
= 25°C; f = 1 MHz
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