參數(shù)資料
型號(hào): MT54V512H18A
廠商: Micron Technology, Inc.
英文描述: 512K x 18 Synchronous Pipelined Burst SRAM(9Mb,流水線式,同步脈沖靜態(tài)存儲(chǔ)器)
中文描述: 為512k × 18同步流水線突發(fā)靜態(tài)存儲(chǔ)器(9Mb以上,流水線式,同步脈沖靜態(tài)存儲(chǔ)器)
文件頁(yè)數(shù): 13/22頁(yè)
文件大?。?/td> 258K
代理商: MT54V512H18A
13
512K x 18 2.5V V
DD
, HSTL, QDRb2 SRAM
MT54V512H18A.p65 – Rev. 3/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
512K x 18
2.5V V
DD
, HSTL, QDRb2 SRAM
AC TEST CONDITIONS
Input pulse levels.................................0.25V to 1.25V
Input rise and fall times ......................................0.3ns
Input timing reference levels ............................ 0.75V
Output reference levels .................................. V
DD
Q/2
ZQ for 50
W
impedance....................................... 250
W
Output load .............................................See Figure 1
50
V
DD
Q/2
250
Z = 50
ZQ
SRAM
0.75V
V
REF
Figure 1
Output Load Equivalent
相關(guān)PDF資料
PDF描述
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