參數(shù)資料
型號(hào)： MT55L512L18F
廠商： Micron Technology, Inc.
英文描述： 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
中文描述： 8MB的：為512k × 18，流量通過(guò)ZBT SRAM的（8兆流通式同步靜態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 18/25頁(yè)
文件大小： 380K
代理商： MT55L512L18F
18
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
NOTE:
1. This parameter is sampled.
2. OE# can be considered a “ Don’t Care” during WRITEs; however, controlling OE# can help fine-tune a system for
turnaround timing.
3. Test conditions as specified with output loading as shown in Figure 1 for 3.3V I/O (V
DD
Q = +3.3V ±0.165V) and
Figure 3 for 2.5V I/O (V
DD
Q = +2.5V +0.4V/-0.125V).
4. A WRITE cycle is defined by R/W# LOW having been registered into the device at ADV/LD# LOW. A READ cycle is
defined by R/W# HIGH with ADV/LD# LOW. Both cases must meet setup and hold times.
5. Measured as HIGH above V
IH
and LOW below V
IL
.
6. Refer to Technical Note TN-55-01, “ Designing with ZBT SRAMs,” for a more thorough discussion on these parameters.
7. This parameter is sampled.
8. This parameter is measured with output loading as shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O.
9. Transition is measured ±200mV from steady state voltage.
10. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK
when they are being registered into the device. All other synchronous inputs must meet the setup and hold times with
stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each rising
edge of CLK when ADV/LD# is LOW to remain enabled.
11. Preliminary package data.
AC ELECTRICAL CHARACTERISTICS
(Notes 2, 3, 4) (0°C
￡
T
A
￡
+70°C; V
DD
= +3.3V ±0.165V unless otherwise noted)
-10
-11
-12
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
Clock to output valid
Clock to output invalid
Clock to output in Low-Z
Clock to output in High-Z
OE# to output valid
OE# to output in Low-Z
OE# to output in High-Z
Setup Times
Address
Clock enable (CKE#)
Control signals
Data-in
Hold Times
Address
Clock enable (CKE#)
Control signals
Data-in
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
t
KHKH
f
KF
t
KHKL
t
KLKH
10
11
12
ns
100
90
83
MHz
ns
ns
2.5
2.5
3.0
3.0
3.0
3.0
5
5
t
KHQV
t
KHQX
t
KHQX1
t
KHQZ
t
GLQV
t
GLQX
t
GHQZ
7.5
8.5
9.0
ns
ns
ns
ns
ns
ns
ns
3.0
3.0
3.0
3.0
3.0
3.0
6
6, 7, 8, 9
6, 7, 8, 9
2
6, 7, 8, 9
6, 7, 8, 9
5.0
5.0
5.0
5.0
5.0
5.0
0
0
0
5.0
5.0
5.0
t
AVKH
t
EVKH
t
CVKH
t
DVKH
2.0
2.0
2.0
2.0
2.2
2.2
2.2
2.2
2.5
2.5
2.5
2.5
ns
ns
ns
ns
10
10
10
10
t
KHAX
t
KHEX
t
KHCX
t
KHDX
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
10
10
10
10
FBGA THERMAL RESISTANCE
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
CONDITIONS
SYMBOL
q
JA
TYP
40
UNITS NOTES
°C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1, 11
Junction to Case (Top)
q
JC
q
JB
9
°C/W
1, 11
Junction to Pins (Bottom)
17
°C/W
1, 11
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