參數(shù)資料
型號: MT55L256L32F
廠商: Micron Technology, Inc.
英文描述: 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
中文描述: 8MB的:256K × 32,流量通過ZBT SRAM的(8兆流通式同步靜態(tài)存儲器)
文件頁數(shù): 11/25頁
文件大?。?/td> 380K
代理商: MT55L256L32F
11
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FBGA PIN DESCRIPTIONS (continued)
x18
x32/x36
1H, 4C, 4N,
SYMBOL
V
SS
TYPE
Supply Ground:
GND.
DESCRIPTION
1H, 4C, 4N,
5C, 5D, 5E, 5F, 5C, 5D, 5E, 5F,
5G, 5H, 5J,
5K, 5L, 5M,
6C,
6D,
6E,
6F,
6G, 6H, 6J,
6K, 6L, 6M,
7C, 7D, 7E,
7F, 7G, 7H,
7J, 7K, 7L,
7M, 7N, 8C, 8N 7M, 7N, 8C, 8N
5P, 5R, 7P, 7R 5P, 5R, 7P, 7R
5G, 5H, 5J,
5K, 5L, 5M,
6C,
6D,
6E,
6F,
6G, 6H, 6J,
6K, 6L, 6M,
7C, 7D, 7E,
7F, 7G, 7H,
7J, 7K, 7L,
DNU
Do Not Use: These signals may either be unconnected or wired to
GND to improve package heat dissipation.
No Connect: These signals are not internally connected and
may be connected to ground to improve package heat
dissipation.
1A, 1B, 1C,
1D, 1E, 1F,
1G, 1P, 2C,
2J, 2K, 2L,
2M, 2N, 2P,
2R, 3H, 4B,
9B, 5A, 5N,
6N, 9H, 10C,
10D, 10E,
10F, 10G,
10H, 10N,
11B, 11J,
11K, 11L,
11M, 11N,
11P
1A, 1B, 1P,
2C, 2N, 2P,
2R, 3H, 5N,
6N, 9B, 9H,
10C, 10H,
10N, 11A,
11B, 11P
NC
相關PDF資料
PDF描述
MT55L256L36F 8Mb: 256K x 36,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L256V32F 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L256V36F 8Mb: 256K x 36,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L64L32F1 64K x 32,3.3V I/O, ZBT SRAM(2Mb,3.3V輸入/輸出,靜態(tài)RAM)
MT55L64L36F1 64K x 36,3.3V I/O, ZBT SRAM(2Mb,3.3V輸入/輸出,靜態(tài)RAM)
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