參數(shù)資料
型號： MT58L64L32FT-6.8
廠商： Micron Technology, Inc.
英文描述： 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
中文描述： 2MB的：128K的× 18，64K的x 32/36流通過SYNCBURST的SRAM
文件頁數(shù)： 9/24頁
文件大?。?/td> 488K
代理商： MT58L64L32FT-6.8
9
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65
–
Rev. 6/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
.................................... -0.5V to +4.6V
Voltage on V
DD
Q Supply
Relative to V
SS
.................................... -0.5V to +4.6V
V
IN
...............................................-0.5V to V
DD
Q + 0.5V
Storage Temperature (plastic) ............ -55°C to +150°C
Junction Temperature** .................................... +150°C
Short Circuit Output Current........................... 100mA
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature and
airflow. See Micron Technical Note TN-05-14 for more
information.
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
+70
°
C; V
DD
, V
DD
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
SYMBOL
V
IH
V
IL
IL
I
IL
O
MIN
2.0
-0.3
-1.0
-1.0
MAX
V
DD
+ 0.3
0.8
1.0
1.0
UNITS
V
V
μA
μA
NOTES
1, 2
1, 2
3
0V
≤
V
IN
≤
V
DD
Output(s) disabled,
0V
≤
V
IN
≤
V
DD
I
OH
= -4.0mA
I
OL
= 8.0mA
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
V
OH
V
OL
V
DD
V
DD
Q
2.4
–
3.135
3.135
–
V
V
V
V
1, 4
1, 4
1
1, 5
0.4
3.6
V
DD
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
Undershoot:
Power-up:
3. MODE pin has an internal pull-up, and input leakage = ±10μA.
4. The load used for V
OH
, V
OL
testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher
than the stated DC values. AC I/O curves are available upon request.
5. V
DD
Q should never exceed V
DD
. V
DD
and V
DD
Q can be connected together for 3.3V I/O.
V
IH
≤
+4.6V for t
≤
t
KC/2 for I
≤
20mA
V
IL
≥
-0.7V for t
≤
t
KC/2 for I
≤
20mA
V
IH
≤
+3.6V and V
DD
≤
3.135V for t
≤
200ms
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
+70
°
C; V
DD
= +3.3V +0.3V/-0.165V; V
DD
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
Data bus (DQx)
Inputs
SYMBOL
V
IH
Q
V
IH
V
IL
IL
I
IL
O
MIN
1.7
1.7
-0.3
-1.0
-1.0
MAX
UNITS
V
V
V
μA
μA
NOTES
1, 2
1, 2
1, 2
3
V
DD
Q + 0.3
V
DD
+ 0.3
0.7
1.0
1.0
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
0V
≤
V
IN
≤
V
DD
Output(s) disabled,
0V
≤
V
IN
≤
V
DD
Q (DQx)
I
OH
= -2.0mA
I
OH
= -1.0mA
I
OL
= 2.0mA
I
OL
= 1.0mA
Output High Voltage
V
OH
V
OH
V
OL
V
OL
V
DD
V
DD
Q
1.7
2.0
–
–
3.135
2.375
–
–
V
V
V
V
V
V
1, 4
1, 4
1, 4
1, 4
1
1
Output Low Voltage
0.7
0.4
3.6
2.9
Supply Voltage
Isolated Output Buffer Supply
相關(guān)PDF資料
PDF描述
MT58L64L32FT-7.5 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64L32FT-8.5 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
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