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參數(shù)資料
| 型號(hào)： | MT4LC8M8P4TG-5 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DRAM |
| 中文描述： | 內(nèi)存 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大?。?/td> | 382K |
| 代理商： | MT4LC8M8P4TG-5 |
7
8 Meg x 8 FPM DRAM
D19_2.p65
–
Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8 MEG x 8
FPM DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (V
CC
= +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (FAST PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period
Refresh period (2,048 cycles)
“
S
”
version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-5
-6
SYMBOL
t
RAD
t
RAH
t
RAS
t
RASP
t
RASS
t
RC
t
RCD
t
RCH
t
RCS
t
REF
t
REF
t
RP
t
RPC
t
RPS
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WP
t
WRH
t
WRP
MIN
13
8
50
50
100
90
18
0
0
MAX
MIN
15
10
60
60
100
110
20
0
0
MAX
UNITS
ns
ns
ns
ns
μs
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
15
10,000
125,000
10,000
125,000
14
16
64
128
64
128
22
30
5
90
0
13
131
73
13
2
8
40
0
8
10
10
40
5
105
0
15
155
85
15
2
10
45
0
10
10
10
16
18
50
50
18
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