參數(shù)資料
型號(hào)： MT55V1MV18P
廠商： Micron Technology, Inc.
英文描述： 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器)
中文描述： 16Mb的：1梅格× 18，流量通過ZBT SRAM的（16Mb的流通式同步靜態(tài)存儲(chǔ)器）
文件頁數(shù)： 16/34頁
文件大?。?/td> 460K
代理商： MT55V1MV18P
16
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1M18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
3.3V V
DD
, 2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0oC
￡
T
A
￡
+70oC; V
DD
= +3.3V ±0.165V; V
DD
Q = ±0.125V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
Data bus (DQx)
Inputs
SYMBOL
V
IH
Q
V
IH
V
IL
IL
I
IL
O
MIN
1.7
1.7
-0.3
-1.0
-1.0
MAX
UNITS
V
V
V
μA
μA
NOTES
1, 2
1, 2
1, 2
3, 4
V
DD
Q + 0.3
V
DD
+ 0.3
0.7
1.0
1.0
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
0V
￡
V
IN
￡
V
DD
Output(s) disabled,
0V
￡
V
IN
￡
V
DD
Q (DQx)
I
OH
= -2.0mA
I
OH
= -1.0mA
I
OL
= 2.0mA
I
OL
= 1.0mA
Output High Voltage
V
OH
V
OH
V
OL
V
OL
V
DD
V
DD
Q
1.7
2.0
–
–
3.135
2.375
–
–
V
V
V
V
V
V
1
1
1
1
1
1
Output Low Voltage
0.7
0.4
3.465
2.625
Supply Voltage
Isolated Output Buffer Supply
2.5V V
DD
, 2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0oC
￡
T
A
￡
+70oC; V
DD
= +3.3V ±0.165V; V
DD
Q = +2.5V ±0.125V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
Data bus (DQx)
Inputs
SYMBOL
V
IH
Q
V
IH
V
IL
IL
I
IL
O
MIN
1.7
1.7
-0.3
-1.0
-1.0
MAX
UNITS
V
V
V
μA
μA
NOTES
1, 2
1, 2
1, 2
3, 4
V
DD
Q + 0.3
V
DD
+ 0.3
0.7
1.0
1.0
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
0V
￡
V
IN
￡
V
DD
Output(s) disabled,
0V
￡
V
IN
￡
V
DD
Q (DQx)
I
OH
= -2.0mA
I
OH
= -1.0mA
I
OL
= 2.0mA
I
OL
= 1.0mA
Output High Voltage
V
OH
V
OH
V
OL
V
OL
V
DD
V
DD
Q
1.7
2.0
–
–
2.375
2.375
–
–
V
V
V
V
V
V
1
1
1
1
1
1
Output Low Voltage
0.7
0.4
3.625
3.625
Supply Voltage
Isolated Output Buffer Supply
NOTE:
1. All voltages referenced to V
SS
(GND).
2. For 3.3V V
DD
:
Overshoot:
Undershoot:
Power-up:
For 2.5V V
DD
:
Overshoot:
Undershoot:
Power-up:
3. MODE pin has an internal pull-up, and input leakage = ±10μA.
4. Ms# pin has an internal pull-down , and input leakage = ±10μA.
V
IH
￡
+4.6V for t
￡
t
KC/2 for I
￡
20mA
V
IL
3
-0.7V for t
￡
t
KC/2 for I
￡
20mA
V
IH
￡
+3.6V and V
DD
￡
3.135V for t
￡
200ms
V
IH
￡
+3.6V for t
￡
t
KC/2 for I
￡
20mA
V
IL
3
-0.5V for t
￡
t
KC/2 for I
￡
20mA
V
IH
￡
+2.65V and V
DD
￡
2.375V for t
￡
200ms
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