參數(shù)資料
型號(hào): MT4LC16M4T8TG-5
廠商: Micron Technology, Inc.
英文描述: DRAM
中文描述: 內(nèi)存
文件頁(yè)數(shù): 17/20頁(yè)
文件大?。?/td> 350K
代理商: MT4LC16M4T8TG-5
17
16 Meg x 4 FPM DRAM
D21_2.p65 – Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16 MEG x 4
FPM DRAM
HIDDEN REFRESH CYCLE
1
(WE# = HIGH; OE# = LOW)
DON’T CARE
UNDEFINED
tCLZ
tOFF
OPEN
VALID DATA
OPEN
COLUMN
ROW
tCAC
tRAC
tAA
tCAH
tASC
tRAH
tASR
tRAD
tAR
tCRP
tRCD
tRSH
tRAS
tRP
tCHR
tRAS
DQ
V
IOL
V
IL
ADDR
V
IL
CAS#
V
IL
RAS#
V
IL
tOE
tOD
OE#
tORD
-5
-6
SYMBOL
t
OE
t
OFF
t
ORD
t
RAC
t
RAD
t
RAH
t
RAS
t
RCD
t
RP
t
RSH
MIN
MAX
13
13
MIN
MAX
15
15
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
0
3
0
50
60
13
8
50
18
30
13
15
10
60
20
40
15
10,000
10,000
TIMING PARAMETERS
-5
-6
SYMBOL
t
AA
t
AR
t
ASC
t
ASR
t
CAC
t
CAH
t
CHR
t
CLZ
t
CRP
t
OD
MIN
MAX
25
MIN
MAX
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
40
0
0
45
0
0
13
15
8
10
15
3
5
3
15
3
5
3
13
15
NOTE:
1. A HIDDEN REFRESH may also be performed after a WRITE cycle. In this case, WE# is LOW and OE# is HIGH.
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