- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385640 > MT58L64L32FT-10 (Micron Technology, Inc.) 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | MT58L64L32FT-10 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| 中文描述： | 2MB的：128K的× 18，64K的x 32/36流通過(guò)SYNCBURST的SRAM |
| 文件頁(yè)數(shù)： | 9/24頁(yè) |
| 文件大小： | 488K |
| 代理商： | MT58L64L32FT-10 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)
9
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65
–
Rev. 6/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
.................................... -0.5V to +4.6V
Voltage on V
DD
Q Supply
Relative to V
SS
.................................... -0.5V to +4.6V
V
IN
...............................................-0.5V to V
DD
Q + 0.5V
Storage Temperature (plastic) ............ -55°C to +150°C
Junction Temperature** .................................... +150°C
Short Circuit Output Current........................... 100mA
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature and
airflow. See Micron Technical Note TN-05-14 for more
information.
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
+70
°
C; V
DD
, V
DD
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
SYMBOL
V
IH
V
IL
IL
I
IL
O
MIN
2.0
-0.3
-1.0
-1.0
MAX
V
DD
+ 0.3
0.8
1.0
1.0
UNITS
V
V
μA
μA
NOTES
1, 2
1, 2
3
0V
≤
V
IN
≤
V
DD
Output(s) disabled,
0V
≤
V
IN
≤
V
DD
I
OH
= -4.0mA
I
OL
= 8.0mA
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
V
OH
V
OL
V
DD
V
DD
Q
2.4
–
3.135
3.135
–
V
V
V
V
1, 4
1, 4
1
1, 5
0.4
3.6
V
DD
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
Undershoot:
Power-up:
3. MODE pin has an internal pull-up, and input leakage = ±10μA.
4. The load used for V
OH
, V
OL
testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher
than the stated DC values. AC I/O curves are available upon request.
5. V
DD
Q should never exceed V
DD
. V
DD
and V
DD
Q can be connected together for 3.3V I/O.
V
IH
≤
+4.6V for t
≤
t
KC/2 for I
≤
20mA
V
IL
≥
-0.7V for t
≤
t
KC/2 for I
≤
20mA
V
IH
≤
+3.6V and V
DD
≤
3.135V for t
≤
200ms
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
+70
°
C; V
DD
= +3.3V +0.3V/-0.165V; V
DD
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
Data bus (DQx)
Inputs
SYMBOL
V
IH
Q
V
IH
V
IL
IL
I
IL
O
MIN
1.7
1.7
-0.3
-1.0
-1.0
MAX
UNITS
V
V
V
μA
μA
NOTES
1, 2
1, 2
1, 2
3
V
DD
Q + 0.3
V
DD
+ 0.3
0.7
1.0
1.0
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
0V
≤
V
IN
≤
V
DD
Output(s) disabled,
0V
≤
V
IN
≤
V
DD
Q (DQx)
I
OH
= -2.0mA
I
OH
= -1.0mA
I
OL
= 2.0mA
I
OL
= 1.0mA
Output High Voltage
V
OH
V
OH
V
OL
V
OL
V
DD
V
DD
Q
1.7
2.0
–
–
3.135
2.375
–
–
V
V
V
V
V
V
1, 4
1, 4
1, 4
1, 4
1
1
Output Low Voltage
0.7
0.4
3.6
2.9
Supply Voltage
Isolated Output Buffer Supply
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L64L32FT-6.8 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L64L32FT-7.5 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L64L32FT-8.5 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L64L36FT-10 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L64L36FT-6.8 | 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L64L32FT-10 TR | 制造商:Cypress Semiconductor 功能描述:64KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L64L32FT-10A | 制造商:Micron Technology Inc 功能描述: |
| MT58L64L32FT-10IT | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MT58L64L32FT-10TR | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MT58L64L32FT-6.8 | 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。