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參數(shù)資料
| 型號： | MT4LC4M16F5 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DRAM |
| 中文描述： | 內(nèi)存 |
| 文件頁數(shù)： | 7/19頁 |
| 文件大小： | 339K |
| 代理商： | MT4LC4M16F5 |
7
4 Meg x 16 FPM DRAM
D28_2.p65 – Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4 MEG x 16
FPM DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12, 13) (V
CC
= +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
RAS# pulse width
RAS# pulse width (FAST PAGE MODE)
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period
RAS# precharge time
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-5
-6
SYMBOL
t
RAS
t
RASP
t
RC
t
RCD
t
RCH
t
RCS
t
REF
t
RP
t
RPC
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WP
t
WRH
t
WRP
MIN
50
50
90
18
0
0
MAX
10,000
125,000
MIN
60
60
110
20
0
0
MAX
10,000
125,000
UNITS
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
14, 26
16, 27
26
22
64
64
30
0
0
13
131
73
13
2
8
40
0
8
10
10
40
0
0
15
155
85
15
2
10
45
0
10
10
10
16
35
18
50
50
35
18, 26
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相關(guān)代理商/技術(shù)參數(shù) |
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| MT4LC4M16N3TG-5 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
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| MT4LC4M16R6 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DRAM |
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