參數(shù)資料
型號(hào): MT55L1MY18P
廠商: Micron Technology, Inc.
英文描述: 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器)
中文描述: 16Mb的:1梅格× 18,流量通過(guò)ZBT SRAM的(16Mb的流通式同步靜態(tài)存儲(chǔ)器)
文件頁(yè)數(shù): 13/34頁(yè)
文件大?。?/td> 460K
代理商: MT55L1MY18P
13
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1M18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
STATE DIAGRAM FOR ZBT SRAM
NOTE:
1. A STALL or IGNORE CLOCK EDGE cycle is not shown in the above diagram. This is because CKE# HIGH only blocks the
clock (CLK) input and does not change the state of the device.
2. States change on the rising edge of the clock (CLK).
DESELECT
BEGIN
READ
BURST
READ
BEGIN
WRITE
DS
DS
DS
BURST
WRITE
READ
DS
WRITE
WRITE
BURST
READ
WRITE
READ
BURST
BURST
READ
BURST
DS
WRTE
KEY:
COMMAND
DS
READ
WRITE
BURST
OPERATION
DESELECT
New READ
New WRITE
BURST READ,
BURST WRITE or
CONTINUE DESELECT
BURST
READ
WRITE
相關(guān)PDF資料
PDF描述
MT55V1MV18P 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L512L18F 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L256L32F 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L256L36F 8Mb: 256K x 36,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
MT55L256V32F 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲(chǔ)器)
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