參數(shù)資料
型號: MT58L32L36D
廠商: Micron Technology, Inc.
英文描述: 32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
中文描述: 32KX8的36,3.3六/ O的流水線,雙氰胺SyncBurst的SRAM(1兆,3.3V的輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
文件頁數(shù): 3/17頁
文件大?。?/td> 326K
代理商: MT58L32L36D
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L64L18D.p65 – Rev. 9/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
3
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
GENERAL DESCRIPTION (continued)
pins are only available on the x18 and x36 versions.
The device incorporates an additional pipelined
enable register which delays turning off the output
buffer an additional cycle when a deselect is executed.
This feature allows depth expansion without penaliz-
ing system performance.
Micron’s 1Mb SyncBurst SRAMs operate from a
+3.3V power supply, and all inputs and outputs are
TTL-compatible. The device is ideally suited for
Pentium
and PowerPC pipelined systems and systems
that benefit from a very wide, high-speed data bus. The
device is also ideal in generic 16-, 18-, 32-, 36-, 64- and
Please to (
www.micron.com/mti/msp/html/sramprod.html
) for
the latest data sheet.
W eb * Pins 49 and 50 are reserved for address expansion.
相關(guān)PDF資料
PDF描述
MT58L512Y32D 16Mb SYNCBURST⑩ SRAM
MT58L64L18F 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
MT58L32L32F 32K x 32, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
MT58L32L36F 32K x 36, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
MT58L64L18P 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
相關(guān)代理商/技術(shù)參數(shù)
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