型號 | 廠商 | 描述 |
rf1k49223 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
rf1k4922396 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
rf1k49224 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTERSIL CORP | 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET |
rf1s22n10sm 2 3 4 5 6 |
INTERSIL CORP | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
rfp22n10 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
rf1s22n10sm 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
rfp22n10 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
rf1s23n06lesm 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
rfp23n06le 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
rf1s25n06sm 2 3 4 5 6 7 8 |
INTERSIL CORP | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
rf1s25n06 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
rf1s25n06sm 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
rf1s30n06lesm 2 3 4 5 6 7 8 |
INTERSIL CORP | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs(30A, 60V、額定ESD值0.047Ω邏輯電平N溝道功率MOS場效應(yīng)管) |
rfp30n06le 2 3 4 5 6 7 8 |
Harris Corporation | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
rfp30n06le 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
rfp30n06le 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
rf1s30n06lesm 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
rf1s30n06le 2 3 4 5 6 7 8 |
Harris Corporation | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
rf1s30n06lesm 2 3 4 5 6 7 8 |
Harris Corporation | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
rf1s30p05sm 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強型功率MOS場效應(yīng)管) |
rfp30p05 2 3 4 5 6 7 8 |
INTERSIL CORP | 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs |
rfp30p06 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
rfg30p05 2 3 4 5 6 7 8 |
INTERSIL CORP | 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強型功率MOS場效應(yīng)管) |
rf1s30p06 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
rf1s30p06sm 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應(yīng)管) |
rfg30p06 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應(yīng)管) |
rf1s40n10lesm 2 3 4 5 6 7 8 |
INTERSIL CORP | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
rfp40n10le 2 3 4 5 6 7 8 |
INTERSIL CORP | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
rf1s40n10sm 2 3 4 5 6 7 8 |
INTERSIL CORP | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs |
rfg40n10le 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 40A, 100V, 0.040 Ohm, Logic Level,N-Channel Power MOSFETs(40A, 100V, 0.040 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
rf1s40n10 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | CAP 470PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
rf1s40n10sm 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs |
rf1s45n06lesm 2 3 4 5 6 7 8 |
INTERSIL CORP | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs(45A, 60V, 0.028 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
rfp45n06le 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs |
rf1s45n06sm 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
rfg45n06 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
rfp45n06 2 3 4 5 6 7 8 |
INTERSIL CORP | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
rfg45n06 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
rfp45n06 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
rf1s45n06sm 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
rf1s45n06 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
rf1s4n100sm 2 3 4 5 6 |
INTERSIL CORP | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
rfp4n100 2 3 4 5 6 |
INTERSIL CORP | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
rf1s50n06lesm 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 50A, 60V, 0.022 Ohm, Logic Level,N-Channel Power MOSFETs(50A, 60V, 0.022 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
rfp50n06le 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | CAP Tantalum-Wet Miniature 6V 8.0 uF +/-5% Silver can Axial High Reliability , TPC - Hilton |
rfg50n06le 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 50A, 60V, 0.022 Ohm, Logic Level,N-Channel Power MOSFETs(50A, 60V, 0.022 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
rf1s50n06sm 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
rf1s50n06sm 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
rf1s530sm 2 3 4 5 6 7 |
INTERSIL CORP | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs(14A, 100V, 0.160 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
rf1s540sm 2 3 4 5 6 7 |
INTERSIL CORP | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強型功率MOS場效應(yīng)管) |