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參數(shù)資料
| 型號： | RF1S50N06SM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | RF1S50N06SM |
4-473
PSPICE Electrical Model
.SUBCKT RFP50N06 2 1 3
REV 2/22/93
*
NOM TEMP = 25
o
C
CA 12 8 3.68e-9
CB 15 14 3.625e-9
CIN 6 8 1.98e-9
DBODY 7 5 DBDMOD
DBREAK 5 11DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 64.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.65e-9
LSOURCE 3 7 4.13e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 0.690
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 12e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.678
.MODEL DBDMOD D (IS=9.85e-13 RS=4.91e-3 TRS1=2.07e-3 TRS2=2.51e-7 CJO=2.05e-9 TT=4.33e-8)
.MODEL DBKMOD D (RS=1.98e-1 TRS1=2.35E-4 TRS2=-3.83e-6)
.MODEL DPLCAPMOD D (CJO=1.42e-9 IS=1e-30 N=10)
.MODEL MOSMOD NMOS (VTO=3.65 KP=35 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.23e-3 TC2=-2.34e-7)
.MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.49e-5)
.MODEL RVTOMOD RES (TC1=-5.03e-3 TC2=-5.16e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.75 VOFF=-2.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.5 VOFF=-6.75)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.7 VOFF=2.3)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.3 VOFF=-2.7)
.ENDS
NOTE: For further discussion of the PSPICE model consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature
Options;
authors, William J. Hepp and C. Frank Wheatley.
10
-
DPLCAP
RDRAIN
DBREAK
LDRAIN
DRAIN
SOURCE
LSOURCE
DBODY
RBREAK
RVTO
VBAT
+
-
19
IT
RSOURCE
EBREAK
MOS2
EDS
EGS
RIN
CIN
VTO
ESG
S1A
S2A
S2B
S1B
CB
CA
EVTO
+
18
RGATE
GATE
LGATE
5
2
18
17
7
11
21
8
6
16
20
9
1
12
15
14
13
13
8
14
13
+
-
+
-
+
-
+
-
+
-
MOS1
3
6
8
5
8
8
6
8
17
18
RFG50N06, RFP50N06, RF1S50N06SM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S50N06SM9A | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S50N06SM9AS2551 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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