參數(shù)資料
型號： RFG45N06
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs
中文描述： 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/8頁
文件大?。?/td> 73K
代理商： RFG45N06
4-456
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG45N06, RFP45N06
RF1S45N06SM
60
60
45
Refer to Peak Current Curve
±
20
Refer to UIS Curve
131
0.877
-55 to 175
UNITS
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
G
= 20K
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V (125
o
C)
V
GS
=
±
20V
I
D
= 45A, V
GS
= 10V (Figure 9)
V
DD
= 30V, I
D
= 45A
R
L
= 0.667
, V
GS
= +10V
R
G
= 3.6
(Figure 13)
60
-
-
V
Gate Threshold Voltage
2
-
4
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain Source On Resistance (Note 2)
-
-
0.028
Turn-On Time
-
-
120
ns
Turn-On Delay Time
-
12
-
ns
Rise Time
-
74
-
ns
Turn-Off Delay Time
-
37
-
ns
Fall Time
-
16
-
ns
Turn-Off Time
-
-
80
ns
Total Gate Charge
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DS
= 25V, V
GS
= 0V
f = 1MHz (Figure 12)
V
DD
= 48V, I
D
= 45A,
R
L
= 1.07
I
g(REF)
= 1.5mA
(Figure 13)
-
125
150
nC
Gate Charge at 10V
-
67
80
nC
Threshold Gate Charge
-
3.7
4.5
nC
Input Capacitance
-
2050
-
pF
Output Capacitance
-
600
-
pF
Reverse Transfer Capacitance
-
200
-
pF
Thermal Resistance Junction to Case
-
-
1.14
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= 45A
I
SD
= 45A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Diode Reverse Recovery Time
-
-
125
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFG45N06, RFP45N06, RF1S45N06SM
相關(guān)PDF資料
PDF描述
RFP45N06 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs
RFG45N06 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RFP45N06 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S45N06SM 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S45N06 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFG45N06_02 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:45A, 60V, 0.028 Ohm, N-Channel Power
RFG45N06LE 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFG50N05 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFG50N05L 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
RFG50N06 制造商:Rochester Electronics LLC 功能描述:- Bulk
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