參數(shù)資料
型號(hào)： RF1S40N10
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： CAP 470PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
中文描述： 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
文件頁(yè)數(shù)： 4/6頁(yè)
文件大小： 371K
代理商： RF1S40N10
2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
2.5
2.0
1.5
1.0
0.5
0
-50
0
50
100
150
200
N
T
J,
JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 40A
O
1.50
1.25
1.00
0.75
0
-50
0
T
J,
JUNCTION TEMPERATURE (
o
C)
50
100
150
200
T
N
0.50
0.25
V
GS
= V
DS
I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-50
0
T
J,
JUNCTION TEMPERATURE (
o
C)
50
100
150
200
N
B
I
D
= 250
μ
A
C
ISS
C
OSS
C
RSS
6000
4000
2000
1000
0
0
5
10
15
20
25
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5000
3000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
100
75
50
25
0
10
7.5
5.0
2.5
0
V
G
G
20
I
g(REF)
I
g(ACT)
80
I
g(REF)
I
g(ACT)
t, TIME (
μ
s)
R
L
= 2.5
I
g(REF)
= 2.25mA
V
GS
= 10V
V
D
D
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
相關(guān)PDF資料
PDF描述
RF1S40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
RF1S45N06LESM 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs(45A, 60V, 0.028 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管)
RFP45N06LE 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs
RF1S45N06SM 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs
RFG45N06 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S40N10LE 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S40N10LESM 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
RF1S40N10LESM9A 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S40N10SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S40N10SM9A 功能描述:MOSFET USE 512-FDB3682 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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