參數(shù)資料
型號(hào): RF1S30N06LESM
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs(30A, 60V、額定ESD值0.047Ω邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述: 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 80K
代理商: RF1S30N06LESM
6-265
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
V
GS
= 1V
0
Q
g(5)
V
GS
= 5V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
G(REF)
0
RFP30N06LE, RF1S30N06LESM
相關(guān)PDF資料
PDF描述
RFP30N06LE 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
RFP30N06LE 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
RFP30N06LE 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
RF1S30N06LESM 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
RF1S30N06LE 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
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