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參數(shù)資料
| 型號(hào)： | RFP30P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | RFP30P06 |
4-130
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
3000
2000
1000
0
0
-5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
-15
-20
-25
C
4000
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
-50
-37.5
-25
-12.5
0
DRAIN SOURCE VOLTAGE
-10
-7.5
-5
-2.5
0
GATE
SOURCE
VOLTAGE
V
D
,
V
G
,
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
R
L
= 1.67
I
G(REF)
= 1.6mA
V
GS
= -10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
RFG30P05, RFP30P05, RF1S30P05SM
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| RF1S30P06 | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
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| RFG30P06 | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| RF1S40N10LESM | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
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