參數(shù)資料
型號(hào)： RFP45N06
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
中文描述： 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 73K
代理商： RFP45N06
4-456
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG45N06, RFP45N06
RF1S45N06SM
60
60
45
Refer to Peak Current Curve
±
20
Refer to UIS Curve
131
0.877
-55 to 175
UNITS
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
G
= 20K
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V (125
o
C)
V
GS
=
±
20V
I
D
= 45A, V
GS
= 10V (Figure 9)
V
DD
= 30V, I
D
= 45A
R
L
= 0.667
, V
GS
= +10V
R
G
= 3.6
(Figure 13)
60
-
-
V
Gate Threshold Voltage
2
-
4
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain Source On Resistance (Note 2)
-
-
0.028
Turn-On Time
-
-
120
ns
Turn-On Delay Time
-
12
-
ns
Rise Time
-
74
-
ns
Turn-Off Delay Time
-
37
-
ns
Fall Time
-
16
-
ns
Turn-Off Time
-
-
80
ns
Total Gate Charge
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DS
= 25V, V
GS
= 0V
f = 1MHz (Figure 12)
V
DD
= 48V, I
D
= 45A,
R
L
= 1.07
I
g(REF)
= 1.5mA
(Figure 13)
-
125
150
nC
Gate Charge at 10V
-
67
80
nC
Threshold Gate Charge
-
3.7
4.5
nC
Input Capacitance
-
2050
-
pF
Output Capacitance
-
600
-
pF
Reverse Transfer Capacitance
-
200
-
pF
Thermal Resistance Junction to Case
-
-
1.14
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= 45A
I
SD
= 45A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Diode Reverse Recovery Time
-
-
125
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFG45N06, RFP45N06, RF1S45N06SM
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