參數(shù)資料
型號: RF1K49224
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET
中文描述: 3.5 A, 30 V, 0.132 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù): 8/14頁
文件大小: 223K
代理商: RF1K49224
9-23
FIGURE 24. FORWARD BIAS SAFE OPERATING AREA
FIGURE 25. PEAK CURRENT CAPABILITY
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 26. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 27. SATURATION CHARACTERISTICS
FIGURE 28. TRANSFER CHARACTERISTICS
FIGURE 29. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
Typical Performance Curves (P-Channel)
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-1
-10
-100
-0.01
-1
-50
-10
-0.1
-0.1
I
D
,
DC
5ms
10ms
100ms
1s
V
DSS(MAX)
= -30V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
A
= 25
o
C
t, PULSE WIDTH (s)
-100
-10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= -10V
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
V
GS
= -20V
1
10
100
-10
0.1
-15
-1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
-4
-8
-12
0
-1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-3.0
-4.5
-6.0
-7.5
-16
-20
I
D
,
V
GS
= -6V
V
GS
= -10V
V
GS
= -8V
V
GS
= -20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
V
GS
= -5V
V
GS
= -4.5V
V
GS
= -7V
0
-4
-6
-8
-10
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
-4
-8
-12
-16
-20
I
D
,
150
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
100
200
300
400
500
0
-6
-4
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
-2
-8
-10
I
D
= -0.625A
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= -1.25A
I
D
= -2.5A
I
D
= -5.0A
V
DD
= -15V
RF1K49224
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