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參數(shù)資料
| 型號： | RF1S45N06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | RF1S45N06 |
3-35
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Typical Performance Curves
FIGURE 1. SAFE- OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
400
100
10
1
1
10
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
T
C
= +25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
μ
s
10ms
100ms
DC
V
DSS
MAX = 60V
I
D
,
10
1
0.1
0.01
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
T
Z
θ
J
,
P
DM
t
1
t
2
50
40
30
20
10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
2
10
3
t, PULSE WIDTH (ms)
V
GS
= 20V
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE +25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
-------150
–
=
40
T
C
= +25
o
C
I
D
,
125
100
75
50
25
0
0.0
1.5
V
DS,
DRAIN-TO-SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
I
D
,
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 250
μ
s, T
C
= +25
o
C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
I
D
, 125
100
75
50
0
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
+25
o
C
-55
o
C
V
DD
= 15V
+175
o
C
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| RF1S45N06LESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S4N100 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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