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參數(shù)資料
| 型號(hào)： | RFP22N10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 22 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | RFP22N10 |
4-502
FIGURE 7. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless otherwise Specified
(Continued)
2.0
1.5
1.0
0.5
0
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
N
B
I
D
= 250
μ
A
N
2.0
T
J
, JUNCTION TEMPERATURE (
o
C)
O
2.5
1.0
0.5
0
-50
0
50
100
150
200
I
D
= 22A, V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.5
3.0
1.50
1.00
0.75
0.25
050
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
V
GS
= V
DS
, I
D
= 250
μ
A
0.50
1.25
N
V
2500
2000
1500
1000
500
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
C
C
OSS
C
RSS
C
ISS
25
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
100
75
50
V
D
,
25
0
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
G
,
5
10
0
20
I
G(REF)
I
G(ACT)
80
R
L
= 4.55
I
G(REF)
= 1mA
V
GS
= 10V
V
DD
= V
DSS
0.75V
DSS
0.50V
DSS
0.25V
DSS
V
DD
= V
DSS
0.75V
DSS
0.50V
DSS
0.25V
DSS
DRAIN TO SOURCE VOLTAGE
GATE
TO
SOURCE
7.5
2.5
RFP22N10, RF1S22N10SM
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