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參數(shù)資料
| 型號： | RF1S22N10SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 22 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | RF1S22N10SM |
4-502
FIGURE 7. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless otherwise Specified
(Continued)
2.0
1.5
1.0
0.5
0
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
N
B
I
D
= 250
μ
A
N
2.0
T
J
, JUNCTION TEMPERATURE (
o
C)
O
2.5
1.0
0.5
0
-50
0
50
100
150
200
I
D
= 22A, V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.5
3.0
1.50
1.00
0.75
0.25
050
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
V
GS
= V
DS
, I
D
= 250
μ
A
0.50
1.25
N
V
2500
2000
1500
1000
500
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
C
C
OSS
C
RSS
C
ISS
25
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
100
75
50
V
D
,
25
0
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
G
,
5
10
0
20
I
G(REF)
I
G(ACT)
80
R
L
= 4.55
I
G(REF)
= 1mA
V
GS
= 10V
V
DD
= V
DSS
0.75V
DSS
0.50V
DSS
0.25V
DSS
V
DD
= V
DSS
0.75V
DSS
0.50V
DSS
0.25V
DSS
DRAIN TO SOURCE VOLTAGE
GATE
TO
SOURCE
7.5
2.5
RFP22N10, RF1S22N10SM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S22N10SM9A | 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S23N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S23N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S23N06LESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S25N06 | 功能描述:MOSFET Power MOSFET N-Ch 60V/25a/0.047 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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