參數(shù)資料
型號(hào): RF1S40N10SM
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
中文描述: 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 371K
代理商: RF1S40N10SM
2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
RFG40N10, RFP40N10, RF1S40N10,
RF1S40N10SM
40A, 100V, 0.040 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA9846
Features
40A, 100V
r
DS(ON)
= 0.040
UIS Rating Curve
SOA is Power Dissipation Limited
o
C Operating Temperature
175
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG40N10
TO-247
RFG40N10
RFP40N10
TO-220AB
RFP40N10
RF1S40N10
TO-262AA
F1S40N10
RF1S40N10SM
TO-263AB
F1S40N10
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
GATE
SDRAIN
DRAIN
(FLANGE)
Data Sheet
January 2002
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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