參數(shù)資料
型號(hào)： RF1S22N10SM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
中文描述： 22 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 49K
代理商： RF1S22N10SM
4-500
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP22N10,
RF1S22N10SMS
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 1M
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
V
100
V
±
20
V
22
50
A
A
100
W
0.67
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
-55 to 175
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0 (Figure 7)
100
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 9)
2
-
4
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= 80V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 22A, V
GS
= 10V (Figure 8)
-
-
0.080
Turn-On Time
t
(ON)
V
DD
= 50Vwwwwwwwww, I
D
= 11A,
R
L
= 4.5
, V
GS
= 10V,
R
GS
= 25
(Figure 11)
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
13
-
ns
Rise Time
t
r
-
24
-
ns
Turn-Off Delay Time
t
d(OFF)
-
65
-
ns
Fall Time
t
f
-
18
-
ns
Turn-Off Time
t
(OFF)
-
-
120
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0V to 20V
V
DD
= 80V, I
D
≈
22A,
R
L
= 3.64
I
g(REF)
= 1mA
(Figure 11)
-
-
150
nC
Gate Charge at 10V
Q
G(10)
V
GS
= 0V to 10V
-
-
75
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0V to 2V
-
-
3.5
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.5
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-220 and TO-263
-
-
62
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 22A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 22A, dI
SD
/dt = 100A/
μ
s
-
-
200
ns
NOTE:
2. Pulse Test: Pulse Duration = 300
μ
s maximum, duty cycle = 2%.
RFP22N10, RF1S22N10SM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S22N10SM9A 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S23N06LE 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S23N06LESM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S23N06LESM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S25N06 功能描述:MOSFET Power MOSFET N-Ch 60V/25a/0.047 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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