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參數資料
| 型號： | RFP22N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 22 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | RFP22N10 |
4-501
Typical Performance Curves
Unless otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
25
20
15
10
5
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0.1
1
10
100
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
C
DC OPERATION
V
DSS(MAX)
= 100V
I
D
MAX (CONTINUOUS)
t
AV
= (L)(I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
0.01
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
1
10
10
100
1
V
GS
= 20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
T
C
= 25
C
30
20
10
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
V
GS
= 10V
40
50
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
0
30
40
50
20
10
I
D
,
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
PULSE DURATION = 80
μ
s
V
DS
= 15V
DUTY CYCLE = 0.5% MAX.
10
0
T
C
= 25
o
C
T
C
= 175
o
C
T
C
= -55
o
C
RFP22N10, RF1S22N10SM
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