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參數(shù)資料
| 型號(hào)： | RF1S30P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | RF1S30P06 |
4-136
NOTE: Refer to Intersil Application Notes AN9321 and AN9322,
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-100
-10
-1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
GS
= -5V
V
GS
= -6V
V
GS
= -7V
0
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
I
D
-30
-45
-60
-75
V
GS
= -20V
V
GS
= -10V
V
GS
= -8V
-15
V
GS
= -4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
-2
-4
-6
-8
-10
0
-30
-45
-75
-60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
-15
-55
o
C
25
o
C
175
o
C
2
1.5
1
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= 30A
O
2
1.5
1
0.5
0
-80
-40
0
40
80
160
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2
1.5
1
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J,
JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFG30P06, RFP30P06, RF1S30P06SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S30P06SM | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| RFG30P06 | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| RF1S40N10LESM | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
| RFP40N10LE | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
| RF1S40N10SM | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S30P06SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30P06SM9A | 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S40N10 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S40N10LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S40N10LESM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
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