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參數(shù)資料
| 型號： | RF1K49224 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET |
| 中文描述： | 3.5 A, 30 V, 0.132 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 223K |
| 代理商： | RF1K49224 |
9-19
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
NOTE:
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 7. SATURATION CHARACTERISTICS
Typical Performance Curves (N-Channel)
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
10
2
0.001
10
0.1
1
10
-2
10
3
Z
θ
J
,
T
0.01
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
0.01
1
100
10
0.1
0.1
I
D
,
DC
5ms
10ms
100ms
1s
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
V
DSS(MAX)
= 30V
T
J
= MAX RATED
T
A
= 25
o
C
t, PULSE WIDTH (s)
200
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 10V
100
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
1
10
100
10
0.1
20
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
5
10
15
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
V
GS
= 3V
20
25
V
GS
= 4V
I
D
,
V
GS
= 10V
V
GS
= 20V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
A
= 25
C
RF1K49224
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