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參數(shù)資料
| 型號： | RF1S30N06LESM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| 中文描述： | 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 188K |
| 代理商： | RF1S30N06LESM |
2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
AV
,
TIME IN AVALANCHE (ms)
0.01
0.1
1
10
I
A
,
A
1
10
100
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
D
,
0
20
40
60
0
1.5
3.0
4.5
6.0
7.5
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 5V
80
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
C
= 25
o
C
25
o
C
175
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
3.0
4.5
6.0
7.5
1.5
0
20
40
60
I
D
,
-55
o
C
80
100
V
DD
= 15V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
J
, JUNCTION TEMPERATURE (
o
C)
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
N
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
GS
= 5V, I
D
= 30A
O
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0
0.5
1.0
1.5
2.0
N
T
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFP30N06LE, RF1S30N06LESM
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|---|---|
| RF1S30N06LE | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RF1S30N06LESM | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RF1S30P05SM | 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強型功率MOS場效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S30N06LESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30N06LESM9AR4365 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30N06LESMR4365 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30P05 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30P05SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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