參數(shù)資料
型號(hào): RF1S30N06LESM
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
中文描述: 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 188K
代理商: RF1S30N06LESM
2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
2000
1500
500
0
0
5
10
15
20
25
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
RSS
1000
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
60
45
30
15
0
5.0
3.75
2.5
1.25
0
D
,
G
,
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 2.0
I
G(REF)
= 0.62mA
V
GS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
I
G(REF)
I
G(ACT)
t, TIME (s)
20
I
G(REF)
I
G(ACT)
80
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
DUT
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
0V
R
GS
R
L
DUT
+
-
V
GS
V
DS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP30N06LE, RF1S30N06LESM
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RF1S30N06LE 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
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