參數(shù)資料
型號： RF1S30P05SM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強型功率MOS場效應(yīng)管)
中文描述： 30 A, 50 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 3/8頁
文件大小： 70K
代理商： RF1S30P05SM
4-128
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
-20
-10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-30
-40
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
-200
-100
-10
-1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100ms
10ms
1ms
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = -50V
T
C
= 25
o
C
DC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-100
t, PULSE WIDTH (s)
I
D
,
V
GS
= -10V
-10
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
--------------------
T
C
–
=
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-500
V
GS
= -20V
T
C
= 25
o
C
RFG30P05, RFP30P05, RF1S30P05SM
相關(guān)PDF資料
PDF描述
RFP30P05 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs
RFP30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
RFG30P05 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強型功率MOS場效應(yīng)管)
RF1S30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S30P05SM9A 功能描述:MOSFET -50V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S30P06 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P06SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P06SM9A 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S40N10 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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