參數(shù)資料
型號： RF1S30P06
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
中文描述： 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
文件頁數(shù)： 3/8頁
文件大?。?/td> 71K
代理商： RF1S30P06
4-135
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
-20
-10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-30
-40
0.01
0.02
0.05
0.1
0.2
0.5
SINGLE PULSE
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
-200
-100
-10
-1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100ms
DC
10ms
1ms
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-100
t, PULSE WIDTH (s)
I
D
,
V
GS
= -20V
V
GS
= -10V
-10
I
I25
175
---------------------
–
=
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-500
T
C
= 25
o
C
RFG30P06, RFP30P06, RF1S30P06SM
相關(guān)PDF資料
PDF描述
RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應(yīng)管)
RFG30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應(yīng)管)
RF1S40N10LESM 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
RFP40N10LE 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
RF1S40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S30P06SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P06SM9A 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S40N10 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S40N10LE 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S40N10LESM 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*