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參數(shù)資料
| 型號： | RFP30P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | RFP30P06 |
4-129
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-100
-10
-1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
GS
= -5V
V
GS
= -6V
V
GS
= -7V
0
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
I
D
-30
-45
-60
-75
V
GS
= -20V
V
GS
= -10V
V
GS
= -8V
-15
V
GS
= -4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
-2
-4
-6
-8
-10
0
-30
-45
-75
-60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
-15
-55
o
C
25
o
C
175
o
C
2
1.5
1
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= 30A
200
O
2
1.5
1
0.5
0
-80
-40
0
40
80
160
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
=-250
μ
A
2
1.5
1
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J,
JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFG30P05, RFP30P05, RF1S30P05SM
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